[20a-A304-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20a-A304-9] A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel for 3D Integrated Devices

〇Kaito Hikake¹, Zhuo Li¹, Junxiang Hao¹, Chitra Pandy¹, Takuya Saraya¹, Toshiro Hiramoto¹, Takanori Takahashi², Mutsunori Uenuma², Yukiharu Uraoka², Masaharu Kobayashi^1,3 (1.IIS, Univ. of Tokyo, 2.NAIST, 3.d.lab, Univ. of Tokyo)

Keywords:

Oxide semiconductor,Atomic Layer Deposition,InGaOx

We have developed ALD InGaOx (IGO) deposition process for channel, systematically investigated the trade-off among mobility, electrostatics, and reliability in IGO FETs, designed and fabricated multi-gate nanosheet IGO FETs demonstrating normally-off operation, high mobility and reliability, simultaneously, for the first time.