[20a-A309-1~9] 6.1 Ferroelectric thin films

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20a-A309-2] Raman spectroscopy measurement of thickness dependent ferroelectric Al_0.7Sc_0.3N films

〇Yukimura Tokita¹, Kakushima kuniyuki¹, Hoshii Takuya¹, Wakabayashi Hitoshi¹, Tsutsui Kazuo (1.Tokyo Tech.)

Keywords:

ferroelectric,AlScN,Raman

It has been reported that wurtzite Al_1-xSc_xN (0<x≤0.43), in which Sc is introduced into AlN crystal, exhibits ferroelectricity with high remnant polarization and even in thin films. Hoever, the coercive field increases with thinning. In this presentation, we investigate the spectral changes originated from the strain and vibration modes of atoms in the crystal by Raman spectroscopy of ferroelectric Al_0.7Sc_0.3N films. As a result, we confirmed that the peak shift due to thinning is consistent with the trend of the change of the coercive field.