Session Details
[20a-A309-1~9]6.1 Ferroelectric thin films
Wed. Sep 20, 2023 9:00 AM - 11:30 AM JST
Wed. Sep 20, 2023 12:00 AM - 2:30 AM UTC
Wed. Sep 20, 2023 12:00 AM - 2:30 AM UTC
A309 (KJ Hall)
Isaku Kanno(Kobe Univ.), Tomoaki Yamada(Nagoya Univ.)
[20a-A309-1]Characterization of ferroelectric switching properties for multilayer (Al,Sc)N films with various composition ratio
〇(D)Shinnosuke Yasuoka1, Kazuki Okamoto1, Takao Shimizu2,3, Naoko Matsui4, Toshikazu Irisawa4, Koji Tsunekawa4, Hiroshi Funakubo1 (1.Tokyo Tech., 2.NIMS, 3.JST PRESTO, 4.Canon ANELVA)
[20a-A309-2]Raman spectroscopy measurement of thickness dependent ferroelectric Al0.7Sc0.3N films
〇Yukimura Tokita1, Kakushima kuniyuki1, Hoshii Takuya1, Wakabayashi Hitoshi1, Tsutsui Kazuo (1.Tokyo Tech.)
[20a-A309-3]Observation of polarization switching behavior in AlN thin films
at low electric fields
〇Kota Hasegawa1,2, Takao Shimizu2, Takeo Ohsawa2, Isao Sakaguchi1,2, Naoki Ohashi1,2,3 (1.Kyushu Univ., 2.NIMS, 3.Tokyo tech)
[20a-A309-4]Evaluation of band alignment at the Metal/AlScN interface by HAXPES
〇(M2)Gen Nakada1, Yoshiharu Kirihara1, Akira Yasui3, Kuniyuki Kakushima2, Hiroshi Nohira1 (1.Tokyo City Univ, 2.Tokyo Institute of Technology, 3.JASRI)
[20a-A309-5]Improvement in reliability of FeRAM by protecting ferroelectric capacitor with a bilayered aluminum oxide.
〇Mitsuaki Oikawa1, Wensheng Wang1, Takashi Eshita1, Nozomi Sato1, Kazuaki Takai1, Ko Nakamura1, Masaaki Nakabayashi1, Soichiro Ozawa1, Kouichi Nagai1, Satoru Mihara1, Yukinobu Hikosaka1, Hitoshi Saito1 (1.Fujitsu Semiconductor Memory Solution)
[20a-A309-6]Ferroelectric Crystallization of SBT Precursor Films by Irradiating KrF Excimer Laser
〇Mitsue Takahashi1, Shigeki Sakai1, Naoya Hombo2, Takeshi Aiba2, Yutaka Fukuoka2, Teruhisa Kawasaki2 (1.AIST, 2.SHI)
[20a-A309-7]Dependence on Solution Concentration of Hydrothermal BaTiO3 Particle Size
〇Masaki Yamaguchi1, Kai Mitsuishi1, Atsushi Saitoh1, Takashi Yamamoto2 (1.Shibaura Inst. of Tech., 2.Osaka Met. Univ.)
[20a-A309-8]Heat treatment effect of (Bi, K)TiO3 based thin film prepared by hydrothermal method
〇Taichi Murashita1, Yuma Takahashi1, Rurika Kubota1, Yoshiharu Ito2, Yasuhiro Fujii3, Akitoshi Koreeda3, Kazuki Okamoto1, Hiroshi Funakubo1 (1.Tokyo Tech., 2.Nihon Univ, 3.Ritsumeikan Univ.)
[20a-A309-9][Young Scientist Presentation Award Speech] Flexible BaTiO3 Epitaxial Films with Bulk-like Ferroelectricity and Piezoelectricity
〇Lizhikun Gong1, Binjie Chen1, Rui Yu1, Hiromichi Ohta2, Katayama Tsukasa2,3 (1.IST, Hokkaido Univ., 2.RIES, Hokkaido Univ., 3.JST-PRESTO)