[20a-A309-1~9] 6.1 Ferroelectric thin films

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[20a-A309-3] Observation of polarization switching behavior in AlN thin films
at low electric fields

〇Kota Hasegawa^1,2, Takao Shimizu², Takeo Ohsawa², Isao Sakaguchi^1,2, Naoki Ohashi^1,2,3 (1.Kyushu Univ., 2.NIMS, 3.Tokyo tech)

Keywords:

ferroelectric,AlN,sputtering

We have reported that ferroelectricity was clearly observed in non-substituted wurtzite type-AlN thin films and the coercive electric field was 8.3 MV/cm measured by polarization - electric field (P-E) hysteresis loops at 10 kHz. In this study, polarization switching behavior for a relatively long time was observed at low electric field compared to the coercive field measured by P-E hysteresis loops. We will present the measurement results of remanent polarization after an application of low electric field in detail.