[20a-A309-1~9] 6.1 Ferroelectric thin films

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[20a-A309-6] Ferroelectric Crystallization of SBT Precursor Films by Irradiating KrF Excimer Laser

〇Mitsue Takahashi¹, Shigeki Sakai¹, Naoya Hombo², Takeshi Aiba², Yutaka Fukuoka², Teruhisa Kawasaki² (1.AIST, 2.SHI)

Keywords:

ferroelectric,nonvolatile memory

A target of our study is to locally change a strontium bismuth tantalate (SBT) from precursors to ferroelectric bismuth-layered-perovskite SrBi₂Ta₂O₉ crystals by irradiating KrF excimer laser. The precursor films deposited on Si substrates were exposed to the laser light with many factor combinations of laser fluences, number of shots, frequencies, and the sample-stage temperatures. A variety of the processed SBT films were investigated. Under strong irradiation conditions, the film morphologies became rough due to decomposition and element ablation. Under weak ones, the films consisted mainly of paraelectric fluorite phase. As a result, the target ferroelectric SrBi₂Ta₂O₉ was obtained at 600℃ within a particular range of the irradiation conditions.