Presentation Information

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[20a-A311-1]Characterization of InAs/GaAs(111)A Infrared Photodetector

〇Takaaki Mano¹, Akihiro Ohtake¹, Takuya Kawazu¹, Hideki Miyazaki¹, Yoshiki Sakuma¹ (1.NIMS)

Keywords:

InAs,Molecular Beam Epitaxy,Infrared photodetector

We investigated the device characteristic of metamorphic n-InAs on n-GaAs (111)A infrared photodetectors. Due to the strong Fermi-level pinning effect caused by the misfit dislocations at the interface, low dark current maintain under high positive applied voltage. The photodetector device exhibit rather flat detectivity within a wide range of 1-2.5 um.

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