[20a-A311-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[20a-A311-2] MOVPE Growth and Characterization of 3.3-µm-Band Resonant Cavity LED

〇Masakazu Arai¹, Koki Hombu¹, Koji Maeda¹ (1.Univ. of Miyazaki)

Keywords:

MOVPE,RC-LED,Mid-infrared

We have grown a 3-micron-band RC-LED that combines a GaAs/AlGaAs distributed Bragg reflector and a metamorphic InAs layer on a GaAs substrate and evaluated its optical characteristics.