Presentation Information

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[20a-A311-4]Mid-Infrared Emission of Strain Compensated InAsSb/InAsP Superlattice on InAs Substrate Fabricated by MOVPE Method

〇Kenshiro Hikita¹, Koki Hombu¹, Koji Maeda¹, Masakazu Arai¹ (1.Miyazaki Univ.)

Keywords:

Strain compensation quantum well structure,Photoluminescence,Mid-Infrared emission

Mid-infrared gas sensing requires a highly efficient mid-infrared laser and photodetector. Therefore, materials that can cover long wavelengths such as InAsSb are being considered, but the lack of suitable substrates between GaSb and InSb poses a limitation due to lattice constants. A solution to this problem is strain-compensated quantum well structures. In this study, we fabricated samples with and without strain compensation by MOVPE and compared PL luminescence at low temperature (20 K). The sample with strain compensation showed stronger luminescence intensity.

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