[20a-A311-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[20a-A311-6] Growth of GaAsN thin films with controlling N distribution in the growth and in-plane directions on vicinal GaAs substrates using the ALE method

〇Shota Hirakawa¹, Masahiro Kawano¹, Shunsaku Takagi¹, Hidetoshi Suzuki¹ (1.Miyazaki Univ.)

Keywords:

Atomic Layer Epitaxy,GaAsN,superstructure