[20a-A311-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20a-A311-7] Selective lateral MOVPE growth of InP on SOI (001) substrates for III-V/Si integration

〇Hiroya Homma¹, Hiroki Sugiyama¹, Tatsurou Hiraki¹, Toru Segawa¹, Shinji Matsuo¹ (1.NTT)

Keywords:

III-V semiconductor growth on Si,selective growth,MOVPE/MOCVD

Although the integration of III-V semiconductors on Si by direct growth technique is expected for III-V/Si integration, it is difficult to achieve high-quality crystal integration using this technique due to crystal defects at Si/III-V interface. To overcome this problem, a hollow structure surrounded by Si {111} facet and selective growth masks was fabricated on a SOI substrate, and III-V semiconductor was selectively grown laterally from the Si seed to form an InP with low defect density. On the other hand, issues unique to this growth method were also revealed.