[20a-B101-1~11] 15.4 III-V-group nitride crystals

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[20a-B101-10] Planarization of (20-21) GaN Crystal applying Flux-Film-Coated Technique in Na-flux Method

〇Haruki Kitano¹, Masayuki Imanishi¹, Kazuma Hamada¹, Ricksen Tandryo¹, Kousuke Murakami¹, Shigeyoshi Usami¹, Mihoko Maruyama¹, Masashi Yoshimura^1,2, Yusuke Mori¹ (1.Osaka Univ., 2.Osaka Inst.)

Keywords:

gallium nitride,semipolar plane