The 84th JSAP Autumn Meeting 2023
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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[20a-B101-1~11]15.4 III-V-group nitride crystals

Wed. Sep 20, 2023 9:00 AM - 12:15 PM JST
Wed. Sep 20, 2023 12:00 AM - 3:15 AM UTC
B101 (Civic Auditorium)
Narihito Okada(Yamaguchi Univ.), Hisashi Murakami(TUAT)
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9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[20a-B101-1]Fabrication of free-standing GaN substrates by pore-assisted separation method

〇Masafumi Yokoyama1, Fumimasa Horikiri1, Hisashi Mori1, Taichiro Konno1, Hajime Fujikura1 (1.SUMITOMO CHEMICAL Co., Ltd.)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[20a-B101-2]High temperature and high speed growth of GaN using HVPE-THVPE hybrid method

〇Kota Nemoto1, Xingxing Pan1, Hisashi Murakami2 (1.TUAT, 2.TUAT.BASE)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[20a-B101-3]Thermodynamic analysis for HVPE growth of Sn-doped GaN layers

〇Kazuki Ohnishi1, Kansuke Hamasaki2, Naoki Fujimoto1, Shugo Nitta1, Hirotaka Watanabe1, Yoshio Honda1,3,4, Hiroshi Amano1,3,4 (1.IMaSS, Nagoya Univ., 2.Nagoya Univ., 3.Deep Tech, Nagoya Univ., 4.IAR, Nagoya Univ.)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20a-B101-4]HVPE Growth of Sn-doped GaN with High Electron Density

〇Kansuke Hamasaki1, Kazuki Ohnishi2, Shugo Nitta2, Naoki Fujimoto2, Hirotaka Watanabe2, Yoshio Honda2,3,4, Hiroshi Amano2,3,4 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Deep Tech, Nagoya Univ., 4.IAR, Nagoya Univ.)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[20a-B101-5]Crystallization of high-resistivity Zn-doped GaN monocrystal via hydride vapor phase epitaxy

〇Takafumi Odani1, Kenji Iso1, Yuichi Oshima2, Hirotaka Ikeda1, Tae Mochizuki1, Satoru Izumisawa1 (1.Mitsubishi Chemical, 2.NIMS)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[20a-B101-6]Influence of input V/III ratio on homoepitaxial growth of AlN by HVPE

〇Hideyuki Sakano1, Ken Goto1, Reo Yamamoto2, Toru Nagashima2, Michal Bockowski3,4, Atsushi Yamada5, Yoshinao Kumagai1,3 (1.Tokyo Univ. of Agri. and Tech., 2.Tokuyama Corporation, 3.TUAT IGIR, 4.PAS, 5.Fujitsu Ltd.)
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10:45 AM - 11:15 AM JST(1:45 AM - 2:15 AM UTC)

[20a-B101-7][INVITED] Epitaxial growth of GaN using OVPE method and application to power devices

〇Shigeyoshi Usami1, Ritsuko Higashiyama1, Junichi Takino2, Hiroshi Ohta3, Hirotaka Watanabe4, Masayuki Imanishi1, Tomoaki Sumi2, Yoshio Okayama2, Tomoyoshi Mishima3, Shugo Nitta4, Yoshio Honda4, Masashi Yoshimura5, Masahiko Hata6, Masashi Isemura7, Hiroshi Amano4, Yusuke Mori1 (1.Osaka Univ., 2.Panasonic Holdings Corp., 3.Hosei Univ., 4.IMaSS Nagoya Univ., 5.ILE, Osaka Univ., 6.Itochu Plastics Inc., 7.Sosho-Ohshin Inc.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20a-B101-8]Suppression of large pits by ambient heating in OVPE-GaN

〇(M2)Yuki Sakurai1, Shigeyoshi Usami1, Masayuki Imanishi1, Tomoaki Sumi2, Junichi Takino2, Yoshio Okayama2, Mihoko Maruyama1, Masashi Yoshimura3, Masahiko Hata4, Masashi Isemura5, Yusuke Mori1 (1.Grad. Sch. of Eng., Osaka Univ., 2.Panasonic Holdings Corp., 3.ILE, Osaka Univ., 4.Itochu Plastics Inc., 5.Sosho-Ohshin Inc.)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20a-B101-9]Examination of Crystal Growth Conditions on Meltback Surface for Reduction of Dislocations in GaN Crystals in the Na Flux Method

〇Shogo Washida1, Masayuki Imanishi1, Kazuma Hamada1, Ricksen Tandryo1, Kosuke Murakami1, Shigeyoshi Usami1, Mihoko Maruyama1, Masashi Yoshimura1,2, Yusuke Mori1 (1.Grad. Sch. of Eng. Osaka Univ., 2.ILE, Osaka Univ.)
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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[20a-B101-10]Planarization of (20-21) GaN Crystal applying Flux-Film-Coated Technique in Na-flux Method

〇Haruki Kitano1, Masayuki Imanishi1, Kazuma Hamada1, Ricksen Tandryo1, Kousuke Murakami1, Shigeyoshi Usami1, Mihoko Maruyama1, Masashi Yoshimura1,2, Yusuke Mori1 (1.Osaka Univ., 2.Osaka Inst.)
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12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[20a-B101-11][Young Scientist Presentation Award Speech] Record maximum mobility of bulk GaN and anomalous behavior of RT-mobility

〇Shota Kaneki1, Taichiro Konno1, Takeshi Kimura1, Kazutaka Kanegae2,3, Jun Suda3,4, Hajime Fujikura1 (1.Sumitomo Chemical, 2.Kyoto Univ., 3.Nagoya Univ., 4.Nagoya Univ., IMaSS)
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