[20a-B101-1~11] 15.4 III-V-group nitride crystals

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[20a-B101-6] Influence of input V/III ratio on homoepitaxial growth of AlN by HVPE

〇Hideyuki Sakano¹, Ken Goto¹, Reo Yamamoto², Toru Nagashima², Michal Bockowski^3,4, Atsushi Yamada⁵, Yoshinao Kumagai^1,3 (1.Tokyo Univ. of Agri. and Tech., 2.Tokuyama Corporation, 3.TUAT IGIR, 4.PAS, 5.Fujitsu Ltd.)

Keywords:

AlN,HVPE,V/III ratio

AlN is used as substrates for AlGaN-based devices. Homoepitaxial growth by hydride vapor phase epitaxy (HVPE) is a promising method for fabricating low-dislocation-density and high purity AlN substrate. However, because NH₃ decomposition is unavoidable on high temperature HVPE growth of AlN, effective V/III ratio decreases. In this research, effective V/III ratio and its influence on HVPE of AlN were studied by carrying out thermodynamic analysis based on measurement of NH₃ decomposition ratio and growth experiment by varying input V/III ratio.