[20a-B101-1~11] 15.4 III-V-group nitride crystals

10:45 AM - 11:15 AM JST(1:45 AM - 2:15 AM UTC)

[20a-B101-7] [INVITED] Epitaxial growth of GaN using OVPE method and application to power devices

〇Shigeyoshi Usami¹, Ritsuko Higashiyama¹, Junichi Takino², Hiroshi Ohta³, Hirotaka Watanabe⁴, Masayuki Imanishi¹, Tomoaki Sumi², Yoshio Okayama², Tomoyoshi Mishima³, Shugo Nitta⁴, Yoshio Honda⁴, Masashi Yoshimura⁵, Masahiko Hata⁶, Masashi Isemura⁷, Hiroshi Amano⁴, Yusuke Mori¹ (1.Osaka Univ., 2.Panasonic Holdings Corp., 3.Hosei Univ., 4.IMaSS Nagoya Univ., 5.ILE, Osaka Univ., 6.Itochu Plastics Inc., 7.Sosho-Ohshin Inc.)

Keywords:

OVPE method,high growth-rate,gallium nitride