[20a-B201-1~6] 15.6 Group IV Compound Semiconductors (SiC)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[20a-B201-3] Impurity concentration in 4H-SiC epitaxial layer on a bonded wafer of single crystal 4H-SiC and a sintered SiC substrate

〇Mitsuhiro Kushibe¹, Iijima Ryosuke¹ (1.Toshiba Corp. R&D Ctr.)

Keywords:

SiC,Bonded Wafer,Impurity

Epitaxial film was grown on a bonded wafer of 4H-SiC single crystal and a sintered SiC supporting substrate. Impurity concentration was investigated in the epitaxial film. Appropriate purity of sintered SiC will be discussed.