The 84th JSAP Autumn Meeting 2023
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Session Details

Oral presentation15 Crystal Engineering : 15.6 Group IV Compound Semiconductors (SiC)

[20a-B201-1~6]15.6 Group IV Compound Semiconductors (SiC)

Wed. Sep 20, 2023 10:30 AM - 12:00 PM JST
Wed. Sep 20, 2023 1:30 AM - 3:00 AM UTC
B201 (Civic Auditorium)
Hiroaki Hanafusa(Hiroshima Univ.)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[20a-B201-1]Multi-scale Simulation of Solvent Inclusion Formation in SiC Solution Growth Method

〇Langcheng Zheng1, Huiqin Zhou1, Yifan Dang1, Kentaro Kutsukake2,3, Shunta Harada1,3, Miho Tagawa1,3, Toru Ujihara1,3 (1.Grad. School of Eng. Nagoya Univ., 2.AIP RIKEN, 3.IMaSS Nagoya Univ.)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20a-B201-2]Improvement of emission intensity distribution by growth pressure control in fluorescent 4H-SiC

〇(M1)Shota Akiyoshi1, Taisei Mizuno1, Kamiyama Satoshi1, Iwaya Motoaki1, Takeuchi Tetsuya1, Yiyu Ou2, Haiyan Ou2 (1.Meijo Univ., 2.Technical Univ. of Denmark)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[20a-B201-3]Impurity concentration in 4H-SiC epitaxial layer on a bonded wafer of single crystal 4H-SiC and a sintered SiC substrate

〇Mitsuhiro Kushibe1, Iijima Ryosuke1 (1.Toshiba Corp. R&D Ctr.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[20a-B201-4]Theoretical Study of Nitrogen Incorporation at the Steps on SiC(0001) Surface during CVD Growth

〇Souichiro Yamauchi1, Ichiro Mizushima2, Takashi Yoda2,3, Atsushi Oshiyama4, Kenji Shiraishi4 (1.Nagoya Univ., 2.NuFlare Technology, Inc., 3.Tokyo Inst. of Tech., 4.IMaSS, Nagoya Univ.)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[20a-B201-5]Periodic 1D structures on 4H-SiC m-surface

〇(D)Hitoshi Imamura1, Anton Visikovskiy1, Tomonori Ikari2, Yuita Fujisawa3, Yoshinori Okada3, Satoru Tanaka1 (1.Kyusyu Univ., 2.NIT-UC, 3.OIST)
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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[20a-B201-6][Young Scientist Presentation Award Speech] Intrinsic Carrier Density of 4H-SiC Derived by Using Bipolar Junction Transistor

〇Satoshi Asada1, Koichi Murata1, Hajime Tanaka2, Hidekazu Tsuchida1 (1.CRIEPI, 2.Osaka Univ.)
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