[20a-B201-1~6] 15.6 Group IV Compound Semiconductors (SiC)

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[20a-B201-6] [Young Scientist Presentation Award Speech] Intrinsic Carrier Density of 4H-SiC Derived by Using Bipolar Junction Transistor

〇Satoshi Asada¹, Koichi Murata¹, Hajime Tanaka², Hidekazu Tsuchida¹ (1.CRIEPI, 2.Osaka Univ.)

Keywords:

SiC,Intrinsic carrier density