[20p-A202-1~11] Interfacial Nano Electrochemistry: Deepening semiconductor wet processing

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[20p-A202-6] Removal of the absorption loss for nanocavity-based Raman silicon laser fabricated by CMOS-compatible process

〇Yasushi Takahashi¹, Yu Shimomura¹, Makoto Okano² (1.Osaka Met. Univ., 2.AIST)

Keywords:

Raman silicon laser,nanocavity,KOH etching

In this presentation, we present the process development of a nanocavity-based Raman silicon laser fabricated using a CMOS compatible process. We have reported the findings that the impurities that penetrated to a depth of about 10 nm from the side walls of the air holes during plasma etching, lowered the Q factor of the cavity. Here we report that this impurity can be removed by a simple chemical treatment.