Presentation Information
[20p-A301-15]Room Temperature Pulse Response Characteristics of Resistance Switching Memory using Si/CaF2 Quadruple-Barrier Resonant Tunneling Structure
〇(M2)Maiko Hoshino1, Ryoya Usami1, Kanta Murakami1, Masahiro Watanabe1 (1.Tokyo Tech.)
Keywords:
non-volatile memory,resistance switching,resonant tunneling diode
Si/CaF2 heterostructures can be epitaxially grown on Si substrates because of their similar crystal structures and lattice constants, and are promising materials for resonant tunneling integrated devices with large ON/OFF ratios even at room temperature. We have proposed and demonstrated a resistance switching memory device that uses a Si/CaF2 quadruple barrier structure, which has advantages over spontaneously formed nanocrystals in terms of structural controllability and reduced variability, and in which resonant tunneling structures on both sides are responsible for charge injection, retention, and withdrawal operations. In this paper, we report on the fabrication of this resistive switching device and the evaluation of its pulse repetition response characteristics.