Presentation Information
[20p-A301-16]Investigation of (0001) surface high resistivity by Cl2 etching in GaInN/GaN multiple quantum shell LEDs using plasma light emission monitoring
〇(M1)Yuta Hattori1, Soma Inaba1, Ayaka Shima1, Shiori Ii1, Mizuki Takahashi1, Yuki Yamanaka1, Kosei Kubota1, Satoshi Kamiyama1, Motoaki Iwaya1, Tetuya Takeuchi1 (1.Meijo Univ.)
Keywords:
NW
We are conducting research on LEDs using hexagonal prism-shaped fine crystals called nanowires (NW). The NW LED is composed of (0001), a non-polar surface (10-10) and a semi-polar surface (1-101), and there is a problem of reducing efficiency by emitting light on a (0001) surface having a large internal electric field.
In this study, we took advantage of the fact that the contact resistance with the electrode increases due to damage to p-GaN during etching, and selectively damaged the upper part of the surface p-GaN (0001) to achieve high resistance and suppress current injection.
In this study, we took advantage of the fact that the contact resistance with the electrode increases due to damage to p-GaN during etching, and selectively damaged the upper part of the surface p-GaN (0001) to achieve high resistance and suppress current injection.