[20p-A301-1~18] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)

[20p-A301-18] Selective-area growth of InAs nanowires on SOI substrate and vertical transistor application

〇Yuki Takeda¹, Hironori Gamo¹, Junichi Motohisa¹, Katsuhiro Tomioka¹ (1.Hokkaido Univ.)

Keywords:

nanowires,transistor,MOVPE