[20p-A302-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[20p-A302-14] Effects of Nitrogen Radical Irradiation on Electrical Properties of Ga₂O₃ Schottky Barrier Diodes

〇(M1)Kohki Eguchi¹, Shota Sato¹, Zhenwei Wang², Masataka Higashiwaki^1,2 (1.Osaka Metropolitan Univ., 2.NICT)

Keywords:

gallium oxide,Schottky barrier diode,nitridation

Schottky barrier diodes were fabricated using n-Ga₂O₃ (100) substrates whose the surfaces were nitrided by nitrogen radical irradiation, and their current density–voltage characteristics were investigated. Various Schottky characteristics such as uniformity of the turn-on voltage were improved by the nitridation process, suggesting that the nitrogen radical irradiation process has an effect of recovering a damaged Ga₂O₃ surface and equalizing its condition.