[20p-A302-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[20p-A302-15] Structural Characterization of Ga₂O₃ Surfaces Treated by Nitrogen Radical Irradiation

〇(M1)Shoki Taniguchi¹, Kura Nakaoka¹, Masataka Higashiwaki^1,2 (1.Osaka Metropolitan Univ., 2.NICT)

Keywords:

gallium oxide,nitridation,semiconductor

We found that nitrogen radical irradiation has an effect to significantly recover Ga₂O₃ surface and can improve not only Ga₂O₃ Schottky characteristics but also their in-plane uniformity. It can be expected that the surface nitridation treatment would be one of the key processes for fabrication of Ga₂O₃ devices. In this talk, we will present nitridated Ga₂O₃ (100) and (010) surface morphologies observed by atomic force microscopy and elemental composition analyses of the Ga₂O₃ near-surface regions using X-ray photoelectron spectroscopy.