[20p-A302-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[20p-A302-4] Homoepitaxial growth of β-Ga₂O₃ on (-102) substrates

Yuichi Oshima¹, 〇Takayoshi Oshima¹ (1.NIMS)

Keywords:

Ga2O3,HVPE