[20p-A302-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[20p-A302-5] Selective area growth and selective area etching of (−102) β-Ga₂O₃ substrates

〇Takayoshi Oshima¹, Yuichi Oshima¹ (1.NIMS)

Keywords:

Ga2O3,selective area growth,gas etching