[20p-A302-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[20p-A302-8] Growth of Si-doped (010)β-Ga₂O₃ layers by HVPE

〇(M2)Mai Tanaka¹, Yu Kono¹, Ken Goto¹, Yoshinao Kumagai^1,2 (1.Tokyo Univ. of Agri. and Tech., 2.TUAT FLOuRISH)

Keywords:

Ga2O3,HVPE,n-type

β-Ga₂O₃ is expected to be a new generation power device material, and HVPE method enables high-speed growth of high-purity crystals. Recently,β-Ga₂O₃(010) substrates have attracted attention due to their anisotropy in thermal conductivity and compatibility with device manufacturing processes, but fabrication of n-type layers by HVPE has not been studied.In this presentation, we report our achievement of n-type conductivity control in the range of n = 10¹⁶~10¹⁸ cm^-3 on (010) substrate by Si doping.