[20p-A309-1~19] 6.1 Ferroelectric thin films

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[20p-A309-10] Electromechanical characteristics of epitaxial BiFeO₃ thin film on Si substrate fabricated by combinatorial sputtering method

〇(D)Aphayvong Sengsavang¹, Kohei Takaki¹, Norifumi Fujimura¹, Takeshi Yoshimura¹ (1.Osaka Metro. Univ.)

Keywords:

Piezoelectric vibration energy harvesting,BiFeO3

Recently, piezoelectric MEMS vibration energy harvester (MEMS-pVEH) has been getting much attraction. In previous work, resonance type piezoelectric MEMS vibration energy harvester (MEMS-pVEH) using lead-free oriented BiFeO₃ film has shown energy conversion efficiency of 80%. However, it is important to effectively harvest ambient vibration in order to expand the application of the MEMS-pVEH. To develop such an efficient non-resonance type MEMS-pVEH, the enhancement of electromechanical coupling factor K² is required. We focus on improving K² by reducing domain wall contribution with low relative permittivity, via epitaxial growth of BiFeO₃. In this work, the electromechanical properties of epitaxial BiFeO₃ on (001) Si substrate are investigated.