講演情報
[20p-A309-10]Electromechanical characteristics of epitaxial BiFeO3 thin film on Si substrate fabricated by combinatorial sputtering method
〇(D)Aphayvong Sengsavang1, Kohei Takaki1, Norifumi Fujimura1, Takeshi Yoshimura1 (1.Osaka Metro. Univ.)
キーワード：
Piezoelectric vibration energy harvesting、BiFeO3
Recently, piezoelectric MEMS vibration energy harvester (MEMS-pVEH) has been getting much attraction. In previous work, resonance type piezoelectric MEMS vibration energy harvester (MEMS-pVEH) using lead-free oriented BiFeO3 film has shown energy conversion efficiency of 80%. However, it is important to effectively harvest ambient vibration in order to expand the application of the MEMS-pVEH. To develop such an efficient non-resonance type MEMS-pVEH, the enhancement of electromechanical coupling factor K2 is required. We focus on improving K2 by reducing domain wall contribution with low relative permittivity, via epitaxial growth of BiFeO3. In this work, the electromechanical properties of epitaxial BiFeO3 on (001) Si substrate are investigated.