[20p-A309-1~19] 6.1 Ferroelectric thin films

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[20p-A309-4] Remnant polarization enhancement in HfO₂ thin films induced by polarization switching under mechanical tensile strain and its relaxation after removal of the strain

〇Tatsuya Inoue¹, Takashi Onaya², Koji Kita^1,2 (1.Dept. of Mater. Eng., Univ. of Tokyo, 2.Dept. of Adv. Mater. Sci., Univ. of Tokyo)

Keywords:

ferroelectric

The effect of tensile strain on ferroelectricity in HfO₂ thin films was directly verified by applying mechanical strain by 4-point bending. Although P_sw increased with tensile strain of only ~0.02%, a gradual relaxation of P_sw to its original value was observed after removal of the strain. A large increase or decrease in P_sw was observed at room temperature. The large increase or decrease observed at room temperature suggests that the increase or decrease in P_sw is not due to phase transformation, but due to the effect of an increase in the ratio of the phase contributing to polarization in the ferroelectric phase.