[20p-A309-1~19] 6.1 Ferroelectric thin films

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-A309-8] Investigation of Sr(Zr,Ti)O₃ Buffer Layers for Controlling Domain Structure of Ferroelectric Thin Films.

〇(DC)Keisuke Ishihama¹, Kazuki Okamoto¹, Masanori Kodera^2,3, Tomohide Morikawa¹, Takao Shimizu^1,4, Hiroshi Funakubo¹ (1.Tokyo Tech., 2.Tokyo Tech. MCES, 3.AIST, 4.NIMS)

Keywords:

Ferroelectircs,Domain structure,Thin films

In ferroelectric thin films, it is known that the domain structure plays an important role in ferroelectric, piezoelectric, and dielectric properties, and that the domain structure and its properties can be controlled by the strain induced from the lower substrate. In this study, we focused on the approach using Sr(Zr,Ti)O₃ solid solution (SZTO) as a new buffer layer. SZTO buffer layers with various compositions are fabricated on (100) LSAT substrates, and the thickness dependence of the crystal structure and its effect on the domain structure as a buffer layer for PZT films are discussed.