[20p-A311-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[20p-A311-1] <111>A-oriented InP nanowire array grown by self-catalyzed vapor-liquid-solid mode towards stacking-fault-free nanowires

〇Guoqiang Zhang^1,2, Kouta Tateno^1,2, Hiroki Hibino³, Hideki Gotoh⁴, Haruki Sanada¹ (1.NTT BRL, 2.NTT NPC, 3.Kansei Gakuin Univ., 4.Hiroshima Univ.)

Keywords:

nanowire,InP

Mostly, III-V compound semiconductor nanowires are grown along <111>B direction. Defects, namely, stacking faults, has been found to exist for III-V nanowires grown along <111>B direction. In contrast, fewer stacking faults exist in III-V nanowires grown along <111>A direction. Growth of <111>A-oriented InP nanowires with yield up to 100% by widely utilized particle-catalyzed vapor-liquid-solid (VLS) approach remains challenging. Here we report site-controlled growth of <111>A-oriented InP nanowire array with 100% yield by self-catalyzed VLS mode. The <111>A-oriented nanowires contain few stacking faults compared with the nanowires grown under an exact same growth condition.