The 84th JSAP Autumn Meeting 2023
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Oral presentation15 Crystal Engineering : 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[20p-A311-1~8]15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 20, 2023 1:30 PM - 3:45 PM JST
Wed. Sep 20, 2023 4:30 AM - 6:45 AM UTC
A311 (KJ Hall)
Hidetoshi Suzuki(Miyazaki Univ.), Sachie Fujikawa(Saitama Univ.)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[20p-A311-1]<111>A-oriented InP nanowire array grown by self-catalyzed vapor-liquid-solid mode towards stacking-fault-free nanowires

〇Guoqiang Zhang1,2, Kouta Tateno1,2, Hiroki Hibino3, Hideki Gotoh4, Haruki Sanada1 (1.NTT BRL, 2.NTT NPC, 3.Kansei Gakuin Univ., 4.Hiroshima Univ.)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[20p-A311-2]VLS growth of GaAs/GaInNAs/GaAs core-multishell nanowires with telecommunication band emission wavelengths by MBE method on patterned substrates

〇Kaito Nakama1,2, Mitsuki Yukimune3, Akio Higo4, Fumitaro Ishikawa1,2 (1.Hokkaido Univ., 2.Hokkaido Univ. RCIQE, 3.Ehime Univ., 4.d.lab, the Univ. of Tokyo)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[20p-A311-3]Effect of nitride passivation and annealing on the optical characteristics of GaAs nanowires

〇Hidetoshi Hashimoto1,2, Keisuke Minehisa1,2, Kaito Nakama1,2, Fumitaro Ishikawa1,2 (1.Hokkaido Univ., 2.Hokkaido Univ. RCIQE)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[20p-A311-4]Growth of highly uniform InAs quantum dots on 4-inch GaAs substrate

〇Daiki Hatakeyama1, Tamami Naruke1, Kenichi Nishi1, Yutaka Onishi1, Keizo Takemasa1 (1.QD Laser, Inc.)
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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[20p-A311-5]Development of Classification Model of RHEED Patterns Using Transfer Learning

〇JINKWAN KWOEN1, MASAHIRO KAKUDA1,2, YASUHIKO ARAKAWA1 (1.NanoQuine, Univ. Tokyo, 2.AIO Core)
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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[20p-A311-6]Enhancement of high temperature photoluminescence characteristics of InAs/GaAs quantum dot by co-doping technique

〇Masahiro Kakuda1,2, Jinkwan Kwoen1, Yasuhiko Arakawa1 (1.Univ. of Tokyo, 2.AIO Core)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[20p-A311-7]Growth of dilute nitride semiconductor quantum dots and their optical properties

〇Ayano Morita1, Satoshi Hiura1, Junichi Takayama1, Akihiro Murayama1 (1.IST, Hokkaido Univ.)
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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[20p-A311-8]Time-resolved circularly polarized light emission properties of InGaAs quantum dots embedded with AlGaAs barrier

〇Shusuke Nomura1, Satoshi Hiura1, Junichi Takayama1, Murayama Akihiro1 (1.IST, Hokkaido Univ.)
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