[20p-A311-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[20p-A311-2] VLS growth of GaAs/GaInNAs/GaAs core-multishell nanowires with telecommunication band emission wavelengths by MBE method on patterned substrates

〇Kaito Nakama^1,2, Mitsuki Yukimune³, Akio Higo⁴, Fumitaro Ishikawa^1,2 (1.Hokkaido Univ., 2.Hokkaido Univ. RCIQE, 3.Ehime Univ., 4.d.lab, the Univ. of Tokyo)

Keywords:

nanowire,Molecular Beam Epitaxy,III/V materials