[20p-A311-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[20p-A311-3] Effect of nitride passivation and annealing on the optical characteristics of GaAs nanowires

〇Hidetoshi Hashimoto^1,2, Keisuke Minehisa^1,2, Kaito Nakama^1,2, Fumitaro Ishikawa^1,2 (1.Hokkaido Univ., 2.Hokkaido Univ. RCIQE)

Keywords:

nanowire,Molecular Beam Epitaxy,III-V compounds