[20p-A311-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[20p-A311-6] Enhancement of high temperature photoluminescence characteristics of InAs/GaAs quantum dot by co-doping technique

〇Masahiro Kakuda^1,2, Jinkwan Kwoen¹, Yasuhiko Arakawa¹ (1.Univ. of Tokyo, 2.AIO Core)

Keywords:

molecular beam epitaxy