[20p-B101-1~16] 15.4 III-V-group nitride crystals

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[20p-B101-10] Development of InGaN photonics using topological structure

〇Masataka Imura¹, Liwen Sang¹, Yoshihiko Takeda¹, Tadaaki Nagao¹, Yasuo Koide¹, Keiji Nakatsugawa¹, Toshikaze Kariyado¹, Xiao Hu¹ (1.NIMS)

Keywords:

Nitride semiconductor,Topological structure,Optical device

In general, the topological properties of materials appear locally on the surface or edge of a system, and peculiar electrical conduction and peculiar light/electromagnetic wave propagation utilizing this have been reported. In recent years, it has become clear that this topological property is useful not only for surfaces and edges but also for improving the performance of the entire system. Therefore, in this study, we formed a topological structure in a GaN-based material to control the upper and lower wave functions (p-wave and d-wave) of the bandgap near the Γ point and to develop a new light confiment structure caused by the difference in p/d-wave symmetry. We will discuss the possibility of a proposal to realize a new light confinement structure and to design a new optical waveguide.