[20p-B101-1~16] 15.4 III-V-group nitride crystals

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[20p-B101-11] Top-down fabrication of group III nitride nanowires

〇Kouta Tateno^1,2, Masato Takiguchi^1,2, Satoshi Sasaki¹, Kazuaki Ebata¹, Kazuhide Kumakura¹, Yoshitaka Taniyasu¹ (1.NTT BRL, 2.NTT NPC)

Keywords:

nanowire,wet etching

Nanowires were fabricated from epitaxially grown substrates with InGaN quantum wells. Straight nanowires could be obtained by wet etching with a tetramethylammonium hydroxide (TMAH) aqueous solution following ICP dry etching. The lasing was confirmed by room-temperature photoexcitation with a 5-um-long nanowire. It will be expected to be applied to photonic crystal devices.