[20p-B101-1~16] 15.4 III-V-group nitride crystals

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[20p-B101-12] Emission Characteristics of InGaN/GaN Nanocolumns Grown by Nanotemplate Selective Area Growth through Controlled Underlying-n-GaN Top-Shape

〇Shunsuke Kudo¹, Kenya Yoshimura¹, Rie Togashi^1,2, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotech.)

Keywords:

nanocolumn,InGaN,nanotemplate selective area growth