Presentation Information
[20p-B101-15]Optimization of in situ activation annealing conditions for tunnel junction layers of quantum-shell GaN-based LDs
〇Mizuki Takahashi1, Yuki Yamanaka1, Shiori Ii1, Ayaka Shima1, Soma Inaba1, Kosei Kubota1, Yuta Hattori1, Tetsuya Takeuchi1, Motoaki Iwaya1, Satoshi Kamiyama1 (1.Meijo Univ.)
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Nanowire