[20p-B101-1~16] 15.4 III-V-group nitride crystals

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-B101-3] Effects of AlN template polarity on BN grown by MOVPE.

〇(M2)Yuto Oishi¹, Shiyu Xiao¹, Kenjiro Uesugi^2,3, Toru Akiyama¹, Hideto Miyake¹ (1.Mie Univ., 2.Sch. of RIS, 3.ORIP)

Keywords:

semiconductor,hexagonal boron nitride,face to face annealing