[20p-B101-1~16] 15.4 III-V-group nitride crystals

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[20p-B101-8] Highly Efficient Light Emissions from InGaN/GaN Quantum Wells with Dielectric Thin Films and Metallic Nanostructures

〇Koichi Okamoto¹, Seiya Kaito¹, Yuki Kamei¹, Kenta Mitoda¹, Kosuke Fujioka¹, Tetsuya Matsuyama¹, Kenji Wada¹, Mitsuru Funato², Yoichi Kawakami² (1.Osaka Metro. Univ., 2.Kyoto Univ.)

Keywords:

plasmonics,dielectric thin films,metallic nanostructures

We have discovered that the dielectric thin film between GaN and metal plays a crucial role in enhancing the emission of InGaN/GaN quantum wells through plasmonics. Furthermore, significant emission enhancement was achieved by irradiating the oxide film deposited on InGaN/GaN with ultraviolet laser light, even in the absence of metal. Particularly remarkable enhancement was observed in the longer wavelength range, and a high internal quantum efficiency was achieved compared to previous reports. Through surface analysis and measurement of the emission lifetime, we will discuss the detailed mechanism and the potential for device applications.