[20p-B201-1~9] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[20p-B201-6] P-ch Double-Gate Cu-MIC Poly-Ge TFTs Fabricated at 400℃ on Glass Substrates

〇(M2)Sho Suzuki¹, Akito Hara¹ (1.Tohoku Gakuin Univ.)

Keywords:

semiconductor,Ge,TFT