[20p-B201-1~9] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[20p-B201-8] Fabrication of Inversion Mode n-channel TFT on Solid-Phase Crystallized Polycrystalline Ge

〇(M2)linyu huang¹, Kenta Moto¹, Takamitsu Ishiyama², Kaoru Toko², Dong Wang¹, Keisuke Yamamoto¹ (1.Kyushu Univ., 2.Univ. of Tsukuba)

Keywords:

Ge,Thin film transistor

This study aims to fabricate high-performance inversion mode n-channel thin-film transistor (TFT) on polycrystalline Ge at low temperature based on the solid-phase crystallization (SPC) method. We have succeeded in making n-channel TFT on poly-Ge with typical electrical characteristics. However, its fabrication process still contains a high temperature (500 °C) step for activation of ion-implanted source/drain. In order to decrease the temperature, we are using metal induced dopant activation (MIDA) method and successfully reduced the activation temperature to 360 °C. This combination will open a way to high-performance flexible electronic devices based on SPC Ge.