講演情報
[20p-B201-8]Fabrication of Inversion Mode n-channel TFT on Solid-Phase Crystallized Polycrystalline Ge
〇(M2)linyu huang1, Kenta Moto1, Takamitsu Ishiyama2, Kaoru Toko2, Dong Wang1, Keisuke Yamamoto1 (1.Kyushu Univ., 2.Univ. of Tsukuba)
キーワード：
Ge、Thin film transistor
This study aims to fabricate high-performance inversion mode n-channel thin-film transistor (TFT) on polycrystalline Ge at low temperature based on the solid-phase crystallization (SPC) method. We have succeeded in making n-channel TFT on poly-Ge with typical electrical characteristics. However, its fabrication process still contains a high temperature (500 °C) step for activation of ion-implanted source/drain. In order to decrease the temperature, we are using metal induced dopant activation (MIDA) method and successfully reduced the activation temperature to 360 °C. This combination will open a way to high-performance flexible electronic devices based on SPC Ge.