[20p-C402-1~17] 6.2 Carbon-based thin films

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[20p-C402-10] Fabrication of a-CN_x:H films with high nitrogen content from the microwave plasma CVD of the C₂H₂/N₂ gas mixture - What is the chemical bonding states to attain [N]/([N]+[C])>0.5 ?

〇Haruhiko Ito¹, Satoh Yuga¹, Suzuki Tsuneo¹, Saitoh Hidetoshi¹ (1.Nagaoka Univ. Tech.)

Keywords:

amorphous carbon nitride

Hydrogenateed amorphous carbon nitride films were fabricated by using the microwave plasma CVD process of the gas mixture of acetylene and nitrogen. In particular, high nitrogen content was obtained by suprressing the partial pressure of acethylene compared with that of nitrogen. The maximum [N ]/([N]+[C]) ratio was 0.56 obtained at the film inside by using the the etching with the cluster beams of argon. In this study, the chemical bonding states such high-N containing films were investigated by using then peak separation analysisn of the XPS spectra. It is revealed that high-N content is attained because of the inclusion of the sp³-hybridized carbon atoms bonding into 2-4 N atoms per a C atom.