Presentation Information

[20p-C402-13]Fabrication of the ring-gate structure field-effect-transistors using carbon nitride films

〇Masaki Tachibana1, Kota Higuchi1, Noriyuki Urakami1,2, Yoshio Hashimoto1,2 (1.Shinshu Univ., 2.Shinshu Univ. RISM)

Keywords:

graphitic carbon nitride,circular structure field effect transistor,ring-gate structure field effect transistor