Presentation Information
[20p-C402-13]Fabrication of the ring-gate structure field-effect-transistors using carbon nitride films
〇Masaki Tachibana1, Kota Higuchi1, Noriyuki Urakami1,2, Yoshio Hashimoto1,2 (1.Shinshu Univ., 2.Shinshu Univ. RISM)
Keywords:
graphitic carbon nitride,circular structure field effect transistor,ring-gate structure field effect transistor