[21a-A202-1~11] 17.3 Layered materials

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[21a-A202-1] [Young Scientist Presentation Award Speech] p-type operation of WSe₂ FET by the stack control through surface segregation

〇Ryuichi Nakajima¹, Tomonori Nishimura¹, Kaito Kanahashi¹, Keiji Ueno², Yasumitsu Miyata³, Kosuke Nagashio¹ (1.The Univ. of Tokyo, 2.Saitama Univ., 3.Tokyo Metropolitan Univ.)

Keywords:

TMDC,FLP,Surface segregation

Bi have small surface energy, so p-type operation of WSe₂ was tried by stack control of Bi/Pt bilayer electrodes system through surface segregation. After annealing, the property of WSe₂ FET changed from n-type to p-type.