The 84th JSAP Autumn Meeting 2023
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Oral presentation17 Nanocarbon and Two-Dimensional Materials : 17.3 Layered materials

[21a-A202-1~11]17.3 Layered materials

Thu. Sep 21, 2023 9:00 AM - 12:00 PM JST
Thu. Sep 21, 2023 12:00 AM - 3:00 AM UTC
A202 (KJ Hall)
Nobuyuki Aoki(千葉大)
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9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[21a-A202-1][Young Scientist Presentation Award Speech] p-type operation of WSe2 FET by the stack control through surface segregation

〇Ryuichi Nakajima1, Tomonori Nishimura1, Kaito Kanahashi1, Keiji Ueno2, Yasumitsu Miyata3, Kosuke Nagashio1 (1.The Univ. of Tokyo, 2.Saitama Univ., 3.Tokyo Metropolitan Univ.)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[21a-A202-2]Development of logic-in-memory using anti-ambipolar transistors based on two-dimensional thin films

〇Yoshitaka Shingaya1, Takuya Iwasaki1, Ryoma Hayakawa1, Shu Nakaharai1, Junko Aimi1, Kenji Watanabe1, Takashi Taniguchi1, Yutaka Wakayama1 (1.NIMS)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[21a-A202-3]Creating a monoatomic-length-gate transistor with low-environmental-load materials (I)

〇(M1C)Hideaki Sugino1, Sasaki Fuminori1, Yobekubo Kazuki1, Irisawa Toshifumi2, Matsuki Takeo2, Ohori Daisuke3, Endo Kazuhiko3, Watanabe Issei4, Fukidome Hirokazu1 (1.RIEC, Tohoku Univ., 2.AIST, 3.IFS, Tohoku Univ., 4.NICT)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[21a-A202-4]Effects of doping and influences of etching by Cl2plasma treatment for PVD-WS2films

〇(M1)Keita Kuohara1, Shinya Imai1, Shigetaka Tomiya1, Tetsuya Tatsumi1, Hitoshi Wakabayashi1 (1.Tokyo Tech)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[21a-A202-5]Current-Voltage Characteristics of Ni/Al2O3/Sputtered WS2 Contacts

〇(B)Kaede Teraoka1, Shinya Imai1, Keita Kurohara1, Soma Ito1, Takamasa Kawanago1, Iriya Muneta1, Kuniyuki Kakushima1, Hitoshi Wakabayashi1 (1.Tokyo Tech.)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[21a-A202-6]Robust and low-voltage ReRAM operations in 1T-VSe2 with an Ag electrode

〇(M1)Yuta Nakamura1, Mitsuru Inada1, Ueno Keiji2, Mahito Yamamoto1 (1.Kansai Univ., 2.Saitama Univ)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[21a-A202-7]Photocurrent Characterization of Methylated Germanane Thin Film Transistors

〇Yuki Hiraoka1, Kohei Hachiya1, Osamu Kubo1,2, Hiroshi Tabata1, Mitsuhiro Katayama1 (1.Osaka Univ., 2.Gifu Univ.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[21a-A202-8]30-50-nm-thick WSe2 back-channel pFETs with WOx S/D self-aligned to top gate

〇Ryosuke Kajikawa1, Takamasa Kawanago2, Iriya Muneta1, Takuya Hoshii1, Kuniyuki Kakushima1, Kazuo Tsutsui1, Hitoshi Wakabayashi1 (1.Tokyo Inst., 2.FIRST)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[21a-A202-9]Low-Power NO2 sensing using a Monolithic Micro-LED/MoS2 Gas Sensor

〇Hiroshi Tabata1, Shuhei Ichikawa1, Koutarou Fujii1, Shu Nishimura1, Toshihiro Ishihara1, Yasuhumi Fujiwara1, Mitsuhiro Katayama1 (1.Osaka Univ.)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[21a-A202-10]Photoactivated responses of gas sensor based on Co-porphyrin decorated MoS2 to NH3

〇Shu Nishimura1, Kotaro Fujii1, Hiroshi Tabata1, Osamu Kubo1,2, Osamu Maida1, Mitsuhiro Katayama1 (1.Osaka Univ., 2.Gifu Univ.)
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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)English Presentation

[21a-A202-11]Enhancing NO2 Sensitivity through Ni Doping at the Vertical Edge of MoS2: A DFT Investigation

〇(DC)ADITYA KUSHWAHA1, NEERAJ GOEL1 (1.Netaji Subhas University of Technology, Dwarka, Sector - 3, Delhi, 110078, India)
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