[21a-A202-1~11] 17.3 Layered materials

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[21a-A202-2] Development of logic-in-memory using anti-ambipolar transistors based on two-dimensional thin films

〇Yoshitaka Shingaya¹, Takuya Iwasaki¹, Ryoma Hayakawa¹, Shu Nakaharai¹, Junko Aimi¹, Kenji Watanabe¹, Takashi Taniguchi¹, Yutaka Wakayama¹ (1.NIMS)

Keywords:

2D materials,anti-ambipolar transistor,login-in-memory

We report on the fabrication of anti-ambipolar transistors(AAT) that exhibit characteristics similar to negative differential resistance at room temperature by combining two-dimensional atomic layer thin films. In addition, we have achieved logic-in-memory operation by introducing organic memory layer. We have previously reported that six types of logic operation circuits can be realized with a single device by optimizing the input voltage using a dual-gate AAT. In this study, switching of logic operations are realized by writing and erasing charges in the organic memory layer.