[21a-A202-1~11] 17.3 Layered materials

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[21a-A202-3] Creating a monoatomic-length-gate transistor with low-environmental-load materials (I)

〇(M1C)Hideaki Sugino¹, Sasaki Fuminori¹, Yobekubo Kazuki¹, Irisawa Toshifumi², Matsuki Takeo², Ohori Daisuke³, Endo Kazuhiko³, Watanabe Issei⁴, Fukidome Hirokazu¹ (1.RIEC, Tohoku Univ., 2.AIST, 3.IFS, Tohoku Univ., 4.NICT)

Keywords:

monoatomic length gate,Low environmental load,THz transistor

By growing graphene orthogonal to 2D materials, it is theoretically possible to realize the transistor operating at THz frequencies with 100-fold output. In this talk, the monoatomic-length gate by using graphene will be presented. The results enables us to realize THz transistors consisting of low-environmental-load material with the large output.